Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 6 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 70 W
Technical parameters/drain source voltage (Vds): 800 V
Technical parameters/leakage source breakdown voltage: 800 V
Technical parameters/Continuous drain current (Ids): 2A
Technical parameters/rise time: 35 ns
Technical parameters/Input capacitance (Ciss): 440pF @25V(Vds)
Technical parameters/descent time: 28 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 70W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.38 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXTA2N80P
|
IXYS Semiconductor | 类似代替 | TO-252-3 |
MOSFET N-CH 800V 2A TO-263
|
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