Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 22.0 A
Technical parameters/drain source resistance: 350 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 400W (Tc)
Technical parameters/input capacitance: 3.60 nF
Technical parameters/gate charge: 58.0 nC
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/Continuous drain current (Ids): 22.0 A
Technical parameters/rise time: 20 ns
Technical parameters/Input capacitance (Ciss): 3600pF @25V(Vds)
Technical parameters/rated power (Max): 400 W
Technical parameters/descent time: 23 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 400W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFH22N60P3
|
IXYS Semiconductor | 类似代替 | TO-247-3 |
N 通道功率 MOSFET，IXYS HiperFET™ Polar3™ 系列 一系列 IXYS Polar3™ 系列 N 通道功率 MOSFET，具有快速本征二极管 (HiPerFET™) ### MOSFET 晶体管，IXYS IXYS 的一系列高级离散电源 MOSFET 设备
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