Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.39 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 500 W
Technical parameters/threshold voltage: 5 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 22A
Technical parameters/Input capacitance (Ciss): 2600pF @25V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 500W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/length: 16.26 mm
External dimensions/width: 5.3 mm
External dimensions/height: 21.46 mm
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFH22N60P
|
IXYS Semiconductor | 类似代替 | TO-247-3 |
Single N-Channel 600V 400W 58NC Through Hole Power Mosfet - TO-247
|
||
IXFQ22N60P3
|
IXYS Semiconductor | 功能相似 | TO-3-3 |
N 通道功率 MOSFET，IXYS HiperFET™ Polar3™ 系列 一系列 IXYS Polar3™ 系列 N 通道功率 MOSFET，具有快速本征二极管 (HiPerFET™) ### MOSFET 晶体管，IXYS IXYS 的一系列高级离散电源 MOSFET 设备
|
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