Technical parameters/drain source resistance: 100 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 14.0 A
Technical parameters/rise time: 110 ns
Technical parameters/Input capacitance (Ciss): 870pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/descent time: 41 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2000
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDD3N40TM
|
Fairchild | 功能相似 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD3N40TM 晶体管, MOSFET, N沟道, 2 A, 400 V, 2.8 ohm, 10 V, 5 V
|
||
NID6002NT4G
|
ON Semiconductor | 功能相似 | TO-252-3 |
65V,6.5A,带过温和过流保护,N沟道FET
|
||
STD12NF06LT4
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD12NF06LT4 晶体管, MOSFET, N沟道, 12 A, 60 V, 80 mohm, 10 V, 3 V
|
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