Technical parameters/rated voltage (DC): -20.0 V
Technical parameters/rated current: -620 mA
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 540mW (Ta)
Technical parameters/product series: IRLML6302
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 620 mA
Technical parameters/rise time: 18 ns
Technical parameters/Input capacitance (Ciss): 97pF @15V(Vds)
Technical parameters/descent time: 22 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 540mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: End of Life
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLML6302TRPBF
|
International Rectifier | 类似代替 | SOT-23-3 |
P沟道 -20 V 540 mW 2.4 nC 功率Mosfet 表面贴装 - MICRO-3
|
||
IRLML6302TRPBF
|
Infineon | 类似代替 | SOT-23-3 |
P沟道 -20 V 540 mW 2.4 nC 功率Mosfet 表面贴装 - MICRO-3
|
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