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Model IRLML6302TRPBF

Description P沟道 -20 V 540 mW 2.4 nC 功率Mosfet 表面贴装 - MICRO-3

Brand: Infineon

Packaging SOT-23-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated power:	0.54 W
Technical parameters/drain source resistance:	0.6 Ω
Technical parameters/polarity:	P-Channel
Technical parameters/dissipated power:	540 mW
Technical parameters/drain source voltage (Vds):	20 V
Technical parameters/Continuous drain current (Ids):	0.78A
Technical parameters/rise time:	18 ns
Technical parameters/thermal resistance:	230℃/W (RθJC)
Technical parameters/Input capacitance (Ciss):	97pF @15V(Vds)
Technical parameters/rated power (Max):	540 mW
Technical parameters/descent time:	22 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	540 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-23-3
Dimensions/Length:	2.9 mm
Dimensions/Width:	1.3 mm
Dimensions/Height:	1.1 mm
Dimensions/Packaging:	SOT-23-3
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Load Switch, DC Switches
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with standard/REACH SVHC version:	2015/12/17

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
IRLML6302PBF	Infineon	功能相似	SOT-23	INFINEON IRLML6302PBF 晶体管, MOSFET, P沟道, 600 mA, -20 V, 600 mohm, -4.5 V, -1.5 V	PDF
IRLML6302TR	International Rectifier	类似代替	SOT-23-3	SOT-23P-CH 20V 0.78A	PDF
IRLML6302TR	Infineon	类似代替	SOT-23-3	SOT-23P-CH 20V 0.78A	PDF