Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 4.60 A
Technical parameters/rated power: 2.1 W
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.1 W
Technical parameters/product series: IRLL3303
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/Continuous drain current (Ids): 4.60 A
Technical parameters/rise time: 22.0 ns
Technical parameters/Input capacitance (Ciss): 840pF @25V(Vds)
Technical parameters/rated power (Max): 1 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/packaging: TO-261-4
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STN4NF03L
|
ST Microelectronics | 功能相似 | TO-261-4 |
STMICROELECTRONICS STN4NF03L 晶体管, MOSFET, N沟道, 6.5 A, 30 V, 0.039 ohm, 10 V, 1 V
|
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