Technical parameters/dissipated power: 50 W
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/Input capacitance (Ciss): 270pF @25V(Vds)
Technical parameters/rated power (Max): 50 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 50W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/length: 6.73 mm
External dimensions/width: 2.38 mm
External dimensions/height: 6.22 mm
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
VISHAY | 类似代替 | TO-251 |
MOSFET P-CH 400V 1.8A I-PAK
|
||
IRFU9310
|
Vishay Semiconductor | 类似代替 |
MOSFET P-CH 400V 1.8A I-PAK
|
|||
IRFU9310
|
Vishay Siliconix | 类似代替 | TO-251-3 |
MOSFET P-CH 400V 1.8A I-PAK
|
||
IRFU9310PBF
|
International Rectifier | 功能相似 | IPAK-3 |
Power Field-Effect Transistor, 1.8A I(D), 400V, 7Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, PLASTIC, DPAK-3
|
||
IRFU9310PBF
|
Vishay Siliconix | 功能相似 | TO-251-3 |
Power Field-Effect Transistor, 1.8A I(D), 400V, 7Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, PLASTIC, DPAK-3
|
||
|
|
Vishay Intertechnology | 功能相似 | TO-251 |
Power Field-Effect Transistor, 1.8A I(D), 400V, 7Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, PLASTIC, DPAK-3
|
||
IRFU9310PBF
|
VISHAY | 功能相似 | TO-251 |
Power Field-Effect Transistor, 1.8A I(D), 400V, 7Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, PLASTIC, DPAK-3
|
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