Technical parameters/rated voltage (DC): | -400 V |
|
Technical parameters/rated current: | -1.80 A |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 50.0 W |
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Technical parameters/drain source voltage (Vds): | -400 V |
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Technical parameters/Leakage source breakdown voltage: | -400 V |
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Technical parameters/Continuous drain current (Ids): | -1.80 A |
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Technical parameters/rise time: | 10.0 ns |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | IPAK-3 |
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Dimensions/Foot Length: | 9.65 mm |
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Dimensions/Packaging: | IPAK-3 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
VISHAY | 类似代替 | TO-251 |
MOSFET P-CH 400V 1.8A I-PAK
|
||
IRFU9310
|
Vishay Semiconductor | 类似代替 |
MOSFET P-CH 400V 1.8A I-PAK
|
|||
IRFU9310
|
Vishay Siliconix | 类似代替 | TO-251-3 |
MOSFET P-CH 400V 1.8A I-PAK
|
||
IRFU9310PBF
|
International Rectifier | 功能相似 | IPAK-3 |
Power Field-Effect Transistor, 1.8A I(D), 400V, 7Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, PLASTIC, DPAK-3
|
||
IRFU9310PBF
|
Vishay Siliconix | 功能相似 | TO-251-3 |
Power Field-Effect Transistor, 1.8A I(D), 400V, 7Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, PLASTIC, DPAK-3
|
||
|
|
Vishay Intertechnology | 功能相似 | TO-251 |
Power Field-Effect Transistor, 1.8A I(D), 400V, 7Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, PLASTIC, DPAK-3
|
||
IRFU9310PBF
|
VISHAY | 功能相似 | TO-251 |
Power Field-Effect Transistor, 1.8A I(D), 400V, 7Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, PLASTIC, DPAK-3
|
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