Technical parameters/dissipated power: 190W (Tc)
Technical parameters/drain source voltage (Vds): 900 V
Technical parameters/Input capacitance (Ciss): 2900pF @25V(Vds)
Technical parameters/dissipated power (Max): 190W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SK962-01
|
FUJI | 功能相似 |
N-Channel Silicon Power MOS-FET
|
|||
|
|
Infineon | 类似代替 | TO-247 |
Trans MOSFET N-CH 900V 6.7A 3Pin(3+Tab) TO-247AC
|
||
IRFPF50PBF
|
International Rectifier | 类似代替 | TO-247 |
Trans MOSFET N-CH 900V 6.7A 3Pin(3+Tab) TO-247AC
|
||
IRFPF50PBF
|
Vishay Semiconductor | 类似代替 | TO-247 |
Trans MOSFET N-CH 900V 6.7A 3Pin(3+Tab) TO-247AC
|
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