Technical parameters/drain source resistance: 0.23 Ω
Technical parameters/dissipated power: 277 W
Technical parameters/input capacitance: 3450pF @25V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247
External dimensions/packaging: TO-247
Physical parameters/operating temperature: -55℃ ~ 150℃
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STW19NM50N
|
ST Microelectronics | 功能相似 | TO-247-3 |
N 通道 MDmesh™,500V,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
||
STW20NM50FD
|
ST Microelectronics | 功能相似 | TO-247-3 |
STMICROELECTRONICS STW20NM50FD 晶体管, MOSFET, N沟道, 20 A, 500 V, 250 mohm, 10 V, 4 V
|
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