Technical parameters/number of channels: 1
Technical parameters/dissipated power: 30W (Tc)
Technical parameters/drain source voltage (Vds): 800 V
Technical parameters/Input capacitance (Ciss): 530pF @25V(Vds)
Technical parameters/rated power (Max): 30 W
Technical parameters/dissipated power (Max): 30W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/width: 4.83 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFIBE20GPBF
|
VISHAY | 完全替代 | TO-220-3 |
MOSFET N-CH 800V 1.4A TO220FP
|
||
IRFIBE20GPBF
|
Vishay Precision Group | 完全替代 | TO-220 |
MOSFET N-CH 800V 1.4A TO220FP
|
||
IRFIBE20GPBF
|
Vishay Siliconix | 完全替代 | TO-220-3 |
MOSFET N-CH 800V 1.4A TO220FP
|
||
IRFIBE20GPBF
|
Vishay Semiconductor | 完全替代 | TO-220-3 |
MOSFET N-CH 800V 1.4A TO220FP
|
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