Technical parameters/rated voltage (DC): 800 V
Technical parameters/rated current: 1.40 A
Technical parameters/drain source resistance: 6.5 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 30 W
Technical parameters/drain source voltage (Vds): 800 V
Technical parameters/leakage source breakdown voltage: 800 V
Technical parameters/Continuous drain current (Ids): 1.40 A
Technical parameters/rise time: 17.0 ns
Technical parameters/Input capacitance (Ciss): 530pF @25V(Vds)
Technical parameters/rated power (Max): 30 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Minimum Packaging: 50
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFIBE20G
|
Vishay Siliconix | 完全替代 | TO-220-3 |
MOSFET N-CH 800V 1.4A TO220FP
|
||
IRFIBE20G
|
VISHAY | 完全替代 | TO-220 |
MOSFET N-CH 800V 1.4A TO220FP
|
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