Technical parameters/drain source resistance: 2.2 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.1 W
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 3.60 A
Technical parameters/rise time: 13 ns
Technical parameters/Input capacitance (Ciss): 660pF @25V(Vds)
Technical parameters/rated power (Max): 3.1 W
Technical parameters/descent time: 14 ns
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2000
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFBC30S
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 600V 3.6A D2PAK
|
||
IRFBC30S
|
VISHAY | 完全替代 | D2PAK |
MOSFET N-CH 600V 3.6A D2PAK
|
||
IRFBC30S
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 600V 3.6A D2PAK
|
|||
SIHFBC30STRL-GE3
|
Vishay Siliconix | 功能相似 | D2PAK |
SIHFBC30STRL-GE3 N-channel MOSFET Transistor, 3.6A, 600V, 3Pin D2PAK
|
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