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Model IRFBC30S
Description MOSFET N-CH 600V 3.6A D2PAK
Product QR code
Brand: Vishay Siliconix
Packaging TO-263-3
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2307) Minimum order quantity(1)
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Technical parameters/dissipated power:

3.1W (Ta), 74W (Tc)

 

Technical parameters/drain source voltage (Vds):

600 V

 

Technical parameters/Input capacitance (Ciss):

660pF @25V(Vds)

 

Technical parameters/dissipated power (Max):

3.1W (Ta), 74W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

TO-263-3

 

Dimensions/Packaging:

TO-263-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Obsolete

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRFBC30SPBF IRFBC30SPBF Vishay Siliconix 完全替代 TO-263-3
MOSFET N-CH 600V 3.6A D2PAK
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IRFBC30SPBF IRFBC30SPBF LiteOn 完全替代 D2PAK-2
MOSFET N-CH 600V 3.6A D2PAK
IRFBC30STRL IRFBC30STRL VISHAY 完全替代 D2PAK
Mosfet n-Ch 600V 3.6A D2pak
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IRFBC30STRL IRFBC30STRL Vishay Semiconductor 完全替代
Mosfet n-Ch 600V 3.6A D2pak
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IRFBC30STRL IRFBC30STRL Vishay Siliconix 完全替代 TO-263-3
Mosfet n-Ch 600V 3.6A D2pak
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IRFBC30STRLPBF IRFBC30STRLPBF VISHAY 完全替代 TO-252-3
MOSFET N-CH 600V 3.6A D2PAK
PDF
IRFBC30STRLPBF IRFBC30STRLPBF Vishay Siliconix 完全替代 TO-263-3
MOSFET N-CH 600V 3.6A D2PAK
PDF

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