Technical parameters/drain source resistance: 500 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 3.7 W
Technical parameters/drain source voltage (Vds): -60.0 V
Technical parameters/Continuous drain current (Ids): -6.70 A
Technical parameters/rise time: 63 ns
Technical parameters/Input capacitance (Ciss): 270pF @25V(Vds)
Technical parameters/descent time: 31 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.7W (Ta), 43W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2000
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF5210STRLPBF
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P沟道,-100V,-38A,60mΩ@10V
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IRF9Z14SPBF
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IRF9Z14STRL
|
Vishay Siliconix | 完全替代 | TO-263-3 |
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|
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