Technical parameters/dissipated power: 3.7W (Ta), 43W (Tc)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Input capacitance (Ciss): 270pF @25V(Vds)
Technical parameters/dissipated power (Max): 3.7W (Ta), 43W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.67 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF5210STRLPBF
|
Infineon | 功能相似 | TO-263-3 |
P沟道,-100V,-38A,60mΩ@10V
|
||
|
|
LiteOn | 完全替代 | D2PAK-3 |
MOSFET P-CH 60V 6.7A D2PAK
|
||
IRF9Z14SPBF
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET P-CH 60V 6.7A D2PAK
|
||
IRF9Z14SPBF
|
VISHAY | 完全替代 | TO-263-3 |
MOSFET P-CH 60V 6.7A D2PAK
|
||
IRF9Z14STRL
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET P-CH 60V 6.7A D2PAK
|
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