Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 10A/12A
Technical parameters/Input capacitance (Ciss): 900pF @10V(Vds)
Technical parameters/rated power (Max): 2 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9910PBF
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International Rectifier | 类似代替 | SOIC-8 |
HEXFET® 双 N 通道功率 MOSFET,Infineon ### MOSFET 晶体管,Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度,且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品,从电动机控制到照明和家用电器。
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