Technical parameters/rated voltage (DC): 20.0 V
Technical parameters/rated current: 10.0 A
Technical parameters/polarity: Dual N-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/product series: IRF9910
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 12.0 A
Technical parameters/rise time: 14.0 ns
Technical parameters/Input capacitance (Ciss): 900pF @10V(Vds)
Technical parameters/rated power (Max): 2 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STS8DNF3LL
|
ST Microelectronics | 功能相似 | SOIC-8 |
STS8DNF3LL 系列 双 N 沟道 30 V 0.02 Ω 12.5 nC STripFET™ II Mosfet- SOIC-8
|
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