Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.2 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 150 W
Technical parameters/drain source voltage (Vds): -100 V
Technical parameters/Continuous drain current (Ids): -19.0 A
Technical parameters/rise time: 73 ns
Technical parameters/Input capacitance (Ciss): 1400pF @25V(Vds)
Technical parameters/descent time: 57 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 150000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263
External dimensions/length: 10.67 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9540NSPBF
|
International Rectifier | 功能相似 | TO-252-3 |
INFINEON IRF9540NSPBF 晶体管, MOSFET, P沟道, 23 A, -100 V, 117 mohm, -10 V, -4 V
|
||
IRF9540NSTRLPBF
|
Infineon | 功能相似 | TO-263-3 |
INFINEON IRF9540NSTRLPBF 晶体管, MOSFET, P沟道, 23 A, -100 V, 117 mohm, 20 V, 4 V
|
||
IRF9540NSTRLPBF
|
International Rectifier | 功能相似 | TO-263-3 |
INFINEON IRF9540NSTRLPBF 晶体管, MOSFET, P沟道, 23 A, -100 V, 117 mohm, 20 V, 4 V
|
||
IRF9540SPBF
|
International Rectifier | 功能相似 | TO-252-3 |
MOSFET P-CH 100V 19A D2PAK
|
||
|
|
Vishay Intertechnology | 功能相似 |
MOSFET P-CH 100V 19A D2PAK
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|||
IRF9540SPBF
|
Vishay Semiconductor | 功能相似 | TO-263 |
MOSFET P-CH 100V 19A D2PAK
|
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