Technical parameters/number of channels: | 1 |
|
Technical parameters/drain source resistance: | 117 mΩ |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 3.8 W |
|
Technical parameters/product series: | IRF9540NS |
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Technical parameters/threshold voltage: | 4 V |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/Continuous drain current (Ids): | -23.0 A |
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Technical parameters/Input capacitance (Ciss): | 1450pF @25V(Vds) |
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Technical parameters/rated power (Max): | 3.1 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
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Dimensions/Length: | 10.67 mm |
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Dimensions/Height: | 4.83 mm |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2014/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9540NSPBF
|
International Rectifier | 类似代替 | TO-252-3 |
INFINEON IRF9540NSPBF 晶体管, MOSFET, P沟道, 23 A, -100 V, 117 mohm, -10 V, -4 V
|
||
IRF9540NSTRRPBF
|
International Rectifier | 类似代替 | TO-263-3 |
场效应管(MOSFET) IRF9540NSTRRPBF D2PAK
|
||
IRF9540SPBF
|
International Rectifier | 功能相似 | TO-252-3 |
P 通道 MOSFET,100V 至 400V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
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||
|
|
Vishay Intertechnology | 功能相似 |
P 通道 MOSFET,100V 至 400V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
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|||
IRF9540SPBF
|
Vishay Semiconductor | 功能相似 | TO-263 |
P 通道 MOSFET,100V 至 400V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
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