Technical parameters/drain source resistance: 0.85 Ω
Technical parameters/dissipated power: 125 W
Technical parameters/input capacitance: 1100pF @25V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/length: 10.51 mm
External dimensions/packaging: TO-220
Physical parameters/operating temperature: -55℃ ~ 150℃
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
LiteOn | 功能相似 |
MOSFET N-CH 500V 8A TO-220AB
|
|||
IRF840APBF
|
Vishay Intertechnology | 功能相似 | TO-220 |
MOSFET N-CH 500V 8A TO-220AB
|
||
|
|
Infineon | 功能相似 | TO-220 |
Trans MOSFET N-CH 500V 8A 3Pin(3+Tab) TO-220AB
|
||
IRF840PBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Trans MOSFET N-CH 500V 8A 3Pin(3+Tab) TO-220AB
|
||
IRF840PBF
|
International Rectifier | 功能相似 | TO-220 |
Trans MOSFET N-CH 500V 8A 3Pin(3+Tab) TO-220AB
|
||
IRF840PBF
|
Vishay Precision Group | 功能相似 | TO-220 |
Trans MOSFET N-CH 500V 8A 3Pin(3+Tab) TO-220AB
|
||
IRF840PBF
|
VISHAY | 功能相似 | TO-220-3 |
Trans MOSFET N-CH 500V 8A 3Pin(3+Tab) TO-220AB
|
||
IRF840PBF
|
Vishay Semiconductor | 功能相似 | TO-220 |
Trans MOSFET N-CH 500V 8A 3Pin(3+Tab) TO-220AB
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review