Technical parameters/drain source resistance: 0.85 Ω
Technical parameters/dissipated power: 125 W
Technical parameters/input capacitance: 1300pF @25V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/length: 10.51 mm
External dimensions/packaging: TO-220
Physical parameters/operating temperature: -55℃ ~ 150℃
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF744
|
Vishay Semiconductor | 类似代替 | TO-220 |
MOSFET N-CH 450V 8.8A TO-220AB
|
||
IRF744
|
International Rectifier | 类似代替 |
MOSFET N-CH 450V 8.8A TO-220AB
|
|||
IRF744
|
VISHAY | 类似代替 | TO-220 |
MOSFET N-CH 450V 8.8A TO-220AB
|
||
IRF840
|
Vishay Semiconductor | 完全替代 | Through Hole |
MOSFET N-CH 500V 8A TO-220AB
|
||
|
|
Harris | 完全替代 |
MOSFET N-CH 500V 8A TO-220AB
|
|||
IRF840
|
Fairchild | 完全替代 |
MOSFET N-CH 500V 8A TO-220AB
|
|||
IRF840
|
Major Brands | 完全替代 |
MOSFET N-CH 500V 8A TO-220AB
|
|||
|
|
Blue Rocket Electronics | 完全替代 | TO-220 |
MOSFET N-CH 500V 8A TO-220AB
|
||
IRF840
|
Vishay Siliconix | 完全替代 | TO-220-3 |
MOSFET N-CH 500V 8A TO-220AB
|
||
|
|
ST Microelectronics | 类似代替 |
MOSFET N-CH 500V 8A TO-220AB
|
|||
SIHP8N50D-GE3
|
Vishay Semiconductor | 类似代替 | TO-220-3 |
N 通道 MOSFET,D 系列高电压,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
||
STP9NK50Z
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP9NK50Z 晶体管, MOSFET, N沟道, 7.2 A, 500 V, 0.72 ohm, 10 V, 3.75 V
|
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