Technical parameters/drain source resistance: 1.4 Ω
Technical parameters/dissipated power: 74 W
Technical parameters/input capacitance: 620pF @25V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/length: 10.51 mm
External dimensions/packaging: TO-220
Physical parameters/operating temperature: -55℃ ~ 150℃
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
LiteOn | 类似代替 |
VISHAY IRF820APBF 晶体管, MOSFET, N沟道, 2.5 A, 500 V, 3 ohm, 10 V, 4.5 V
|
|||
IRF820APBF
|
VISHAY | 类似代替 | TO-220-3 |
VISHAY IRF820APBF 晶体管, MOSFET, N沟道, 2.5 A, 500 V, 3 ohm, 10 V, 4.5 V
|
||
IRF820APBF
|
Vishay Siliconix | 类似代替 | TO-220-3 |
VISHAY IRF820APBF 晶体管, MOSFET, N沟道, 2.5 A, 500 V, 3 ohm, 10 V, 4.5 V
|
||
IRF820APBF
|
International Rectifier | 类似代替 |
VISHAY IRF820APBF 晶体管, MOSFET, N沟道, 2.5 A, 500 V, 3 ohm, 10 V, 4.5 V
|
|||
IRF830A
|
International Rectifier | 功能相似 |
Trans MOSFET N-CH 500V 4.5A 3Pin TO-220
|
|||
IRF830A
|
VISHAY | 功能相似 | TO-220 |
Trans MOSFET N-CH 500V 4.5A 3Pin TO-220
|
||
IRF830A
|
Vishay Semiconductor | 功能相似 |
Trans MOSFET N-CH 500V 4.5A 3Pin TO-220
|
|||
IRF830APBF
|
Vishay Semiconductor | 功能相似 | TO-220 |
Trans MOSFET N-CH 500V 5A 3Pin(3+Tab) TO-220AB
|
||
IRF830APBF
|
Vishay Precision Group | 功能相似 | TO-220 |
Trans MOSFET N-CH 500V 5A 3Pin(3+Tab) TO-220AB
|
||
|
|
Vishay Intertechnology | 功能相似 | TO-220 |
Trans MOSFET N-CH 500V 5A 3Pin(3+Tab) TO-220AB
|
||
IRF830APBF
|
LiteOn | 功能相似 | TO-220-3 |
Trans MOSFET N-CH 500V 5A 3Pin(3+Tab) TO-220AB
|
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