Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 17.0 A
Technical parameters/polarity: N-CH
Technical parameters/product series: IRF7809AV
Technical parameters/drain source voltage (Vds): 30.0 V
Technical parameters/Continuous drain current (Ids): 13.3 A
Technical parameters/rise time: 36.0 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7809AVPBF
|
Infineon | 类似代替 | SOIC |
INFINEON IRF7809AVPBF 晶体管, MOSFET, N沟道, 14.5 A, 30 V, 0.007 ohm, 4.5 V, 1 V
|
||
IRF7809AVPBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON IRF7809AVPBF 晶体管, MOSFET, N沟道, 14.5 A, 30 V, 0.007 ohm, 4.5 V, 1 V
|
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