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Model IRF7809AVPBF

Description INFINEON IRF7809AVPBF 晶体管, MOSFET, N沟道, 14.5 A, 30 V, 0.007 ohm, 4.5 V, 1 V

Brand: Infineon

Packaging SOIC

Delivery time

Packaging method Rail, Tube

Standard packaging quantity 1

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Technical parameters/rated power:	2.5 W
Technical parameters/number of pins:	8
Technical parameters/drain source resistance:	0.007 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	2.5 W
Technical parameters/threshold voltage:	1 V
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/Continuous drain current (Ids):	13.3A
Technical parameters/rise time:	36 ns
Technical parameters/Input capacitance (Ciss):	3780pF @16V(Vds)
Technical parameters/descent time:	10 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	2.5 W
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	SOIC
Dimensions/Length:	5 mm
Dimensions/Width:	4 mm
Dimensions/Height:	1.5 mm
Dimensions/Packaging:	SOIC
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Product Lifecycle:	Not Recommended for New Designs
Other/Packaging Methods:	Rail, Tube
Other/Manufacturing Applications:	Power Management
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with standard/REACH SVHC version:	2015/12/17