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Model IRF7509TR
Description Micro N+P 30V 2.7A/2A
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Brand: Infineon
Packaging TSSOP-8
Delivery time
Packaging method Cut Tape (CT)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1704) Minimum order quantity(1)
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Technical parameters/rated current: 2.70 A

Technical parameters/drain source resistance: 170 mΩ

Technical parameters/polarity: Dual N-Channel, Dual P-Channel

Technical parameters/dissipated power: 1.25 W

Technical parameters/product series: IRF7509

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 2.00 A

Technical parameters/rise time: 12.0 ns

Technical parameters/Input capacitance (Ciss): 210pF @25V(Vds)

Technical parameters/rated power (Max): 1.25 W

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TSSOP-8

External dimensions/packaging: TSSOP-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Cut Tape (CT)

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards: Contains Lead

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRF7105TRPBF IRF7105TRPBF Infineon 功能相似 SOIC-8
INFINEON IRF7105TRPBF 双路场效应管, MOSFET, N和P沟道, 3.5 A, 25 V, 0.083 ohm, 10 V, 3 V
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