Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 7A
Technical parameters/Input capacitance (Ciss): 1340pF @16V(Vds)
Technical parameters/rated power (Max): 2 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF733
|
Fairchild | 功能相似 |
Small Signal Field-Effect Transistor, 7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
|
|||
IRF733
|
Infineon | 功能相似 |
Small Signal Field-Effect Transistor, 7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
|
|||
IRF7331PBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IRF7331PBF 双路场效应管, MOSFET, 双N沟道, 7 A, 20 V, 30 mohm, 4.5 V, 1.2 V
|
||
IRF7331PBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON IRF7331PBF 双路场效应管, MOSFET, 双N沟道, 7 A, 20 V, 30 mohm, 4.5 V, 1.2 V
|
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