Technical parameters/rated power: 2 W
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.03 Ω
Technical parameters/polarity: Dual N-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/threshold voltage: 1.2 V
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 7A
Technical parameters/rise time: 22 ns
Technical parameters/Input capacitance (Ciss): 1340pF @16V(Vds)
Technical parameters/rated power (Max): 2 W
Technical parameters/descent time: 50 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS6911
|
ON Semiconductor | 功能相似 | SOIC-8 |
FDS6911 系列 20 V 13 mOhm 双 N沟道 逻辑电平 PowerTrench® MOSFET-SOIC-8
|
||
IRF7331TR
|
Infineon | 类似代替 | SOIC-8 |
SOIC N-CH 20V 7A
|
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