Technical parameters/drain source resistance: 160 mΩ
Technical parameters/dissipated power: 3.7W (Ta), 88W (Tc)
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Input capacitance (Ciss): 670pF @25V(Vds)
Technical parameters/dissipated power (Max): 3.7W (Ta), 88W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF530S
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 100V 14A D2PAK
|
||
IRF530S
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 100V 14A D2PAK
|
|||
IRF530S
|
VISHAY | 完全替代 | D2PAK |
MOSFET N-CH 100V 14A D2PAK
|
||
IRF530SPBF
|
Vishay Siliconix | 功能相似 | TO-263-3 |
MOSFET N-CH 100V 14A D2PAK
|
||
|
|
Vishay Intertechnology | 功能相似 |
MOSFET N-CH 100V 14A D2PAK
|
|||
IRF530SPBF
|
VISHAY | 功能相似 | TO-263-3 |
MOSFET N-CH 100V 14A D2PAK
|
||
IRF530SPBF
|
Vishay Semiconductor | 功能相似 | TO-263 |
MOSFET N-CH 100V 14A D2PAK
|
||
IRF530STRLPBF
|
VISHAY | 完全替代 | TO-263-3 |
MOSFET N-CH 100V 14A D2PAK
|
||
IRF530STRRPBF
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 100V 14A D2PAK
|
||
|
|
Vishay Intertechnology | 完全替代 |
MOSFET N-CH 100V 14A D2PAK
|
|||
IRF530STRRPBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET N-CH 100V 14A D2PAK
|
||
IRF540ZSPBF
|
Infineon | 功能相似 | TO-263-3 |
INFINEON IRF540ZSPBF 晶体管, MOSFET, N沟道, 36 A, 100 V, 26.5 mohm, 10 V, 4 V
|
||
IRF540ZSPBF
|
International Rectifier | 功能相似 | TO-263-3 |
INFINEON IRF540ZSPBF 晶体管, MOSFET, N沟道, 36 A, 100 V, 26.5 mohm, 10 V, 4 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review