Technical parameters/drain source resistance: | 160 mΩ |
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Technical parameters/polarity: | N-CH |
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Technical parameters/dissipated power: | 3.7 W |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/Continuous drain current (Ids): | 14A |
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Technical parameters/rise time: | 34 ns |
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Technical parameters/Input capacitance (Ciss): | 670pF @25V(Vds) |
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Technical parameters/rated power (Max): | 3.7 W |
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Technical parameters/descent time: | 24 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 3700 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Minimum Packaging: | 800 |
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Compliant with standards/RoHS standards: |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF530NSTRR
|
International Rectifier | 功能相似 |
Trans MOSFET N-CH 100V 17A 3Pin (2+Tab) D2PAK T/R
|
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IRF530NSTRR
|
Infineon | 功能相似 | TO-263-3 |
Trans MOSFET N-CH 100V 17A 3Pin (2+Tab) D2PAK T/R
|
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