Technical parameters/power supply voltage: 4.5V ~ 5.5V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DIP-24
External dimensions/packaging: DIP-24
Physical parameters/operating temperature: 0℃ ~ 70℃ (TA)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
6116LA25TPG
|
Integrated Device Technology | 完全替代 | DIP-24 |
静态随机存取存储器 16K Asynch. 2Kx8 HS, L-Pwr, 静态随机存取存储器
|
||
IDT6116LA35TP
|
Integrated Device Technology | 完全替代 | DIP-24 |
CMOS静态RAM 16K ( 2K ×8位) CMOS STATIC RAM 16K (2K x 8 BIT)
|
||
IDT6116LA35TPGI
|
Integrated Device Technology | 完全替代 | DIP-24 |
IC SRAM 16Kbit 35NS 24DIP
|
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