Technical parameters/frequency: 360 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 800 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 5A
Technical parameters/minimum current amplification factor (hFE): 200
Technical parameters/Maximum current amplification factor (hFE): 560
Technical parameters/rated power (Max): 800 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 800 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/packaging: TO-251-3
Physical parameters/materials: Silicon
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Other/Manufacturing Applications: DC-DC converter, Relay drivers, Lamp drivers, Motor drivers, Flash
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SA2039-E
|
ON Semiconductor | 类似代替 | TO-251-3 |
双极型晶体管( - ) 50V ,( - ) 5A,低VCE (饱和),( PNP)的NPN单TP / TP -FA Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
|
||
2SB1203T-E
|
ON Semiconductor | 类似代替 | TO-251-3 |
TP PNP 50V 5A
|
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