Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 5A
Technical parameters/minimum current amplification factor (hFE): 200 @500mA, 2V
Technical parameters/rated power (Max): 1 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Other/Manufacturing Applications: Relay drivers, high-speed inverters, converters, and other general high-current switching applications
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SA2039-E
|
ON Semiconductor | 类似代替 | TO-251-3 |
双极型晶体管( - ) 50V ,( - ) 5A,低VCE (饱和),( PNP)的NPN单TP / TP -FA Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
|
||
2SA2039-H
|
ON Semiconductor | 类似代替 | TO-251-3 |
双极晶体管 - 双极结型晶体管(BJT) BIP PNP 5A 50V
|
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