Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 40 W
Technical parameters/breakdown voltage (collector emitter): 80.0 V
Technical parameters/DC current gain (hFE): 150
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Industrial, industry
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Boca Semiconductor | 功能相似 |
TO-220 - Power Transistors and Darlingtons
|
|||
2N6292
|
Multicomp | 功能相似 | TO-220 |
TO-220 - Power Transistors and Darlingtons
|
||
2N6292
|
Mospec | 功能相似 | TO-220 |
TO-220 - Power Transistors and Darlingtons
|
||
2N6292
|
Harris | 功能相似 |
TO-220 - Power Transistors and Darlingtons
|
|||
2N6292
|
Central Semiconductor | 功能相似 | TO-220-3 |
TO-220 - Power Transistors and Darlingtons
|
||
2N6292G
|
ON Semiconductor | 功能相似 | TO-220-3 |
ON SEMICONDUCTOR 2N6292G 单晶体管 双极, NPN, 70 V, 4 MHz, 40 W, 7 A, 2.3 hFE 新
|
||
|
|
Harris | 功能相似 |
Power Transistors TO-220 Case
|
|||
2N6491
|
Central Semiconductor | 功能相似 | TO-220-3 |
Power Transistors TO-220 Case
|
||
2N6491
|
ON Semiconductor | 功能相似 | TO-220-3 |
Power Transistors TO-220 Case
|
||
MJE2955TTU
|
ON Semiconductor | 功能相似 | TO-220-3 |
双极晶体管 - 双极结型晶体管(BJT) PNP Silicon
|
||
MJE2955TTU
|
Fairchild | 功能相似 | TO-220-3 |
双极晶体管 - 双极结型晶体管(BJT) PNP Silicon
|
||
NTE196
|
NTE Electronics | 功能相似 | TO-220 |
NTE ELECTRONICS NTE196 功率晶体管, NPN, 70V, TO-220
|
||
TIP29BG
|
ON Semiconductor | 功能相似 | TO-220-3 |
ON SEMICONDUCTOR TIP29BG 双极晶体管
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review