Technical parameters/rated voltage (DC): 80.0 V
Technical parameters/rated current: 10.0 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 2000 mW
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 10A
Technical parameters/minimum current amplification factor (hFE): 1000 @5A, 3V
Technical parameters/Maximum current amplification factor (hFE): 20000
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Other/Minimum Packaging: 50
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6388
|
ST Microelectronics | 类似代替 | TO-220-3 |
MULTICOMP 2N6388 单晶体管 双极, 达林顿, NPN, 80 V, 65 W, 10 A, 1000 hFE
|
||
|
|
Central Semiconductor | 类似代替 | TO-220-3 |
MULTICOMP 2N6388 单晶体管 双极, 达林顿, NPN, 80 V, 65 W, 10 A, 1000 hFE
|
||
2N6388
|
ON Semiconductor | 类似代替 | TO-220-3 |
MULTICOMP 2N6388 单晶体管 双极, 达林顿, NPN, 80 V, 65 W, 10 A, 1000 hFE
|
||
2N6388G
|
NXP | 功能相似 | TO-220 |
ON SEMICONDUCTOR 2N6388G 单晶体管 双极, NPN, 80 V, 2 W, 10 A, 100 hFE 新
|
||
BDX33BG
|
ON Semiconductor | 功能相似 | TO-220-3 |
ON SEMICONDUCTOR BDX33BG 单晶体管 双极, 达林顿, NPN, 80 V, 70 W, 10 A, 750 hFE
|
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