Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/rated power (Max): 65 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6388
|
ST Microelectronics | 类似代替 | TO-220-3 |
MULTICOMP 2N6388 单晶体管 双极, 达林顿, NPN, 80 V, 65 W, 10 A, 1000 hFE
|
||
|
|
Central Semiconductor | 类似代替 | TO-220-3 |
MULTICOMP 2N6388 单晶体管 双极, 达林顿, NPN, 80 V, 65 W, 10 A, 1000 hFE
|
||
2N6388
|
ON Semiconductor | 类似代替 | TO-220-3 |
MULTICOMP 2N6388 单晶体管 双极, 达林顿, NPN, 80 V, 65 W, 10 A, 1000 hFE
|
||
2N6388G
|
NXP | 功能相似 | TO-220 |
ON SEMICONDUCTOR 2N6388G 单晶体管 双极, NPN, 80 V, 2 W, 10 A, 100 hFE 新
|
||
BDX33BG
|
ON Semiconductor | 功能相似 | TO-220-3 |
ON SEMICONDUCTOR BDX33BG 单晶体管 双极, 达林顿, NPN, 80 V, 70 W, 10 A, 750 hFE
|
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