Technical parameters/drain source resistance: 40 Ω
Technical parameters/breakdown voltage of gate source: 30 V
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-18
External dimensions/length: 5.84 mm
External dimensions/width: 5.84 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-18
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4859UB
|
Microsemi | 功能相似 |
JFET JFET
|
|||
|
|
New Jersey Semiconductor | 功能相似 |
Trans JFET N-CH 100mA 3Pin TO-18
|
|||
2N4860
|
Microsemi | 功能相似 | TO-18 |
Trans JFET N-CH 100mA 3Pin TO-18
|
||
|
|
Central Semiconductor | 功能相似 | TO-18 |
Trans JFET N-CH 100mA 3Pin TO-18
|
||
2N4860
|
InterFET | 功能相似 |
Trans JFET N-CH 100mA 3Pin TO-18
|
|||
2N4860
|
Rochester | 功能相似 |
Trans JFET N-CH 100mA 3Pin TO-18
|
|||
2N4860
|
Motorola | 功能相似 |
Trans JFET N-CH 100mA 3Pin TO-18
|
|||
2N4860
|
Intersil | 功能相似 |
Trans JFET N-CH 100mA 3Pin TO-18
|
|||
4860
|
TE Connectivity | 功能相似 |
Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review