Technical parameters/drain source resistance: 40 Ω
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/breakdown voltage: 30 V
Technical parameters/Input capacitance (Ciss): 18pF @10V(Vds)
Technical parameters/rated power (Max): 360 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-18
External dimensions/packaging: TO-18
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4859UB
|
Microsemi | 功能相似 |
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2N4860
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2N4860
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2N4860
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Rochester | 功能相似 |
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2N4860
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Motorola | 功能相似 |
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2N4860
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Intersil | 功能相似 |
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4860
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TE Connectivity | 功能相似 |
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