Technical parameters/Maximum reverse voltage (Vrrm): 17.1V
Technical parameters/peak pulse power: 1500 W
Technical parameters/minimum reverse breakdown voltage: 19 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DO-201AD
External dimensions/packaging: DO-201AD
Physical parameters/operating temperature: -65℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N6278ARL4G
|
Littelfuse | 完全替代 | DO-201AD-2 |
1500W Mosorb™ 齐纳瞬态电压抑制器（单向） Mosorb 设备设计用于保护电压敏感组件,以抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率：1500W @1 ms 3 类 ESD 等级>(16kV)/个人体模型 最高钳位电压 @ 峰值脉冲电流 低泄漏 UL 497B，用于隔离回路保护 响应时间通常为 ### 瞬态电压抑制器，On Semiconductor
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