Technical parameters/drain source resistance: 0.002 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 375 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 270A
Technical parameters/rise time: 182 ns
Technical parameters/Input capacitance (Ciss): 8970pF @50V(Vds)
Technical parameters/descent time: 189 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 375W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Not Recommended
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFS3006PBF
|
Infineon | 类似代替 | TO-263-3 |
INFINEON IRFS3006PBF 晶体管, MOSFET, N沟道, 270 A, 60 V, 0.002 ohm, 10 V, 4 V
|
||
IRFS3006PBF
|
International Rectifier | 类似代替 | TO-263-3 |
INFINEON IRFS3006PBF 晶体管, MOSFET, N沟道, 270 A, 60 V, 0.002 ohm, 10 V, 4 V
|
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