Technical parameters/rated power: 375 W
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.002 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 375 W
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 8970pF @50V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 270A
Technical parameters/rise time: 182 ns
Technical parameters/Input capacitance (Ciss): 8970pF @50V(Vds)
Technical parameters/descent time: 189 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 375000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.67 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Battery Operated Drive, Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AUIRFS3006
|
Infineon | 类似代替 | TO-263-3 |
场效应管(MOSFET) AUIRFS3006 D2PAK
|
||
AUIRFS3006
|
International Rectifier | 类似代替 | TO-263-3 |
场效应管(MOSFET) AUIRFS3006 D2PAK
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review