Technical parameters/power supply voltage (DC): 2.00V (min)
Technical parameters/power supply current: 2.5 mA
Technical parameters/number of pins: 8
Technical parameters/memory capacity: 32000 B
Technical parameters/access time (Max): 9 ns
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 2V ~ 3.6V
Technical parameters/power supply voltage (Max): 3.6 V
Technical parameters/power supply voltage (Min): 2 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: TDFN-8
External dimensions/height: 0.75 mm
External dimensions/packaging: TDFN-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Computers & Computer Peripherals
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FM25V02-DG
|
Cypress Semiconductor | 类似代替 | TDFN-8 |
NVRAM FRAM Serial-SPI 256Kbit 3V/3.3V 8Pin TDFN EP
|
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FM25V02A-DG
|
Cypress Semiconductor | 完全替代 | DFN-8 |
F-RAM，Cypress Semiconductor Ferroelectric 随机存取存储器 (F-RAM) 是高能效且具有最高可靠性非易失 RAM，用于串行和并行接口。 带有后缀 A 的部件设计用于汽车应用，且符合 AEC-Q100 标准。 非易失性铁电 RAM 存储器 快写入速度 高耐受性 低功耗 ### FRAM（铁电 RAM） FRAM（铁电随机存取存储器）是非易失存储器，将铁电膜用作电容器来储存数据。 F-RAM 有 ROM 和 RAM 设备的特点，具备高速存取、写入模式的高耐受性、低功耗、非易失和出色的防篡改功能。 因此，这款存储器特别适用于需要高安全性和低消耗的智能卡，以及移动电话和其他设备。
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