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Model FM25V02A-DG
Description F-RAM，Cypress Semiconductor Ferroelectric 随机存取存储器 (F-RAM) 是高能效且具有最高可靠性非易失 RAM，用于串行和并行接口。 带有后缀 A 的部件设计用于汽车应用，且符合 AEC-Q100 标准。 非易失性铁电 RAM 存储器 快写入速度 高耐受性 低功耗 ### FRAM（铁电 RAM） FRAM（铁电随机存取存储器）是非易失存储器，将铁电膜用作电容器来储存数据。 F-RAM 有 ROM 和 RAM 设备的特点，具备高速存取、写入模式的高耐受性、低功耗、非易失和出色的防篡改功能。 因此，这款存储器特别适用于需要高安全性和低消耗的智能卡，以及移动电话和其他设备。
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Brand: Cypress Semiconductor
Packaging DFN-8
Delivery time
Packaging method Tube
Standard packaging quantity 1
1.25  yuan 1.25yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3451) Minimum order quantity(1)
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Technical parameters/number of pins:

8

 

Technical parameters/clock frequency:

40 MHz

 

Technical parameters/operating temperature (Max):

85 ℃

 

Technical parameters/operating temperature (Min):

-40 ℃

 

Technical parameters/power supply voltage:

2V ~ 3.6V

 

Technical parameters/power supply voltage (Max):

3.6 V

 

Technical parameters/power supply voltage (Min):

2 V

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

DFN-8

 

Dimensions/Length:

4 mm

 

Dimensions/Width:

4.5 mm

 

Dimensions/Height:

0.7 mm

 

Dimensions/Packaging:

DFN-8

 

Physical parameters/operating temperature:

-40℃ ~ 85℃ (TA)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

lead-free

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FM25V02-DG FM25V02-DG Cypress Semiconductor 完全替代 TDFN-8
CYPRESS SEMICONDUCTOR FM25V02-DG 芯片, 存储器, FRAM, 512K, SPI, 8TDFN
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