Technical parameters/frequency: 15 MHz
Technical parameters/rated voltage (DC): 800 V
Technical parameters/rated current: 3.00 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 50 W
Technical parameters/breakdown voltage (collector emitter): 800 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 20 @200mA, 5V
Technical parameters/rated power (Max): 50 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 50000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/height: 9.4 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSC5027OTU
|
Fairchild | 完全替代 | TO-220-3 |
ON Semiconductor KSC5027OTU , NPN 晶体管, 3 A, Vce=800 V, HFE:8, 1 MHz, 3引脚 TO-220封装
|
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