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Model KSC5027OTU

Description NPN 晶体管，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。

Brand: Fairchild

Packaging TO-220-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/frequency:	15 MHz
Technical parameters/rated voltage (DC):	800 V
Technical parameters/rated current:	3.00 A
Technical parameters/polarity:	NPN
Technical parameters/dissipated power:	50 W
Technical parameters/collector breakdown voltage:	1.10 kV
Technical parameters/breakdown voltage (collector emitter):	800 V
Technical parameters/Maximum allowable collector current:	3A
Technical parameters/minimum current amplification factor (hFE):	20 @200mA, 5V
Technical parameters/rated power (Max):	50 W
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	50000 mW
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-220-3
Dimensions/Length:	9.9 mm
Dimensions/Width:	4.5 mm
Dimensions/Height:	18.95 mm
Dimensions/Packaging:	TO-220-3
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Customs information/ECCN code:	EAR99

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
FJP5027OTU	ON Semiconductor	完全替代	TO-220-3	Trans GP BJT NPN 800V 3A 3Pin(3+Tab) TO-220 T/R	PDF
FJP5027OTU	Fairchild	完全替代	TO-220-3	Trans GP BJT NPN 800V 3A 3Pin(3+Tab) TO-220 T/R	PDF
KSC5027OTU	Fairchild	类似代替	TO-220-3	ON Semiconductor KSC5027OTU , NPN 晶体管, 3 A, Vce=800 V, HFE:8, 1 MHz, 3引脚 TO-220封装