Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.2 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 56 @5mA, 5V
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 250 MHz
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323
External dimensions/length: 2 mm
External dimensions/width: 1.25 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-323
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Infineon | 类似代替 | SOT-323 |
NPN硅数字晶体管(开关电路,逆变器,接口电路,驱动电路) NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
|
||
FJX3008RTF
|
Fairchild | 类似代替 | SOT-323 |
Trans Digital BJT NPN 50V 100mA 3Pin SOT-323 T/R
|
||
MUN2237T1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
NPN硅偏置电阻晶体管 NPN SILICON BIAS RESISTOR TRANSISTOR
|
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