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Model FDU8778
Description MOSFET N-CH 25V 35A I-PAK
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Brand: ON Semiconductor
Packaging TO-251-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6509) Minimum order quantity(1)
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Technical parameters/dissipated power: 39W (Tc)

Technical parameters/drain source voltage (Vds): 25 V

Technical parameters/rise time: 22 ns

Technical parameters/Input capacitance (Ciss): 845pF @13V(Vds)

Technical parameters/descent time: 32 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 39W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-251-3

External dimensions/packaging: TO-251-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: lead-free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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FDD8750 FDD8750 ON Semiconductor 功能相似 TO-252-3
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