Technical parameters/dissipated power: 3.7W (Ta), 18W (Tc)
Technical parameters/drain source voltage (Vds): 25 V
Technical parameters/Input capacitance (Ciss): 425pF @13V(Vds)
Technical parameters/dissipated power (Max): 3.7W (Ta), 18W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDU8778
|
Fairchild | 功能相似 | TO-251-3 |
N沟道PowerTrench MOSFET的25V , 35A , 14mohm N-Channel PowerTrench MOSFET 25V, 35A, 14mohm
|
||
FDU8778
|
ON Semiconductor | 功能相似 | TO-251-3 |
N沟道PowerTrench MOSFET的25V , 35A , 14mohm N-Channel PowerTrench MOSFET 25V, 35A, 14mohm
|
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