Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 7.00 A
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.019 Ω
Technical parameters/polarity: Dual N-Channel
Technical parameters/dissipated power: 1.6 W
Technical parameters/threshold voltage: 1.7 V
Technical parameters/input capacitance: 635 pF
Technical parameters/gate charge: 13.0 nC
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 7.00 mA
Technical parameters/rise time: 9 ns
Technical parameters/Input capacitance (Ciss): 635pF @15V(Vds)
Technical parameters/rated power (Max): 1.6 W
Technical parameters/descent time: 21 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.6 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
Customs Information/Hong Kong Import and Export License: NLR
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS6912
|
ON Semiconductor | 类似代替 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS6912 双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 28 mohm, 10 V, 2 V
|
||
FDS6912
|
Fairchild | 类似代替 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS6912 双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 28 mohm, 10 V, 2 V
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FDS8984
|
Fairchild | 功能相似 | SOIC-8 |
ON Semiconductor 双 Si N沟道 MOSFET FDS8984, 7 A, Vds=30 V, 8引脚 SOIC封装
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|
|
ON Semiconductor | 类似代替 | SOIC |
PowerTrench® N 通道 MOSFET,高达 9.9A,Fairchild Semiconductor ### MOSFET 晶体管,Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合,包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性,以减少结电容和反向恢复电荷,无需额外外部元件即可保持系统启动和运行更长时间。
|
||
FDS8984_F085
|
Fairchild | 类似代替 | SOIC-8 |
PowerTrench® N 通道 MOSFET,高达 9.9A,Fairchild Semiconductor ### MOSFET 晶体管,Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合,包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性,以减少结电容和反向恢复电荷,无需额外外部元件即可保持系统启动和运行更长时间。
|
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